Formation and healing of defects at theSi(111)7×7surface under low-energy ion bombardment
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.7292/fulltext
Reference24 articles.
1. Surface reconstruction in layer-by-layer sputtering of Si(111)
2. Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces
3. Damage evolution and surface defect segregation in low-energy ion-implanted silicon
4. Scanning Tunneling Microscope Studies on Recovery Processes of Sputter-Induced Surface Defects on Si(111)-7×7
5. Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1
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5. Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 × 7 Dimer-Adatom-Stacking Fault Surfaces;Japanese Journal of Applied Physics;2005-02-18
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