Amorphization mechanism and defect structures in ion-beam-amorphized Si, Ge, and GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.165329/fulltext
Reference73 articles.
1. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model
2. Atomic structure of ion implantation damage and process of amorphization in semiconductors
3. High resolution and in situ investigation of defects in Bi-irradiated Si
4. Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation
5. Amorphization processes in self‐ion‐implanted Si: Dose dependence
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