Tetrahedrally bonded ternary amorphous semiconductor alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.1647/fulltext
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 10 Si-Based alloys: SiGe and SiGe:C;Semiconductors and Semimetals;2001
2. Hydrogen diffusion and related defects in hydrogenated amorphous silicon carbide;Journal of Non-Crystalline Solids;1991-04
3. Effects of temperature on structural properties of hydrogenated amorphous silicon‐germanium and carbon‐silicon‐germanium alloys;Journal of Applied Physics;1991-02-15
4. Thermal equilibrium processes in carbon-based amorphous semiconducting ternary alloys;Philosophical Magazine B;1990-05
5. Annealing temperature dependence of conductivity in a-CSiGe:H alloys deposited at different substrate temperatures;Journal of Non-Crystalline Solids;1989-12
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