Chapter 10 Si-Based alloys: SiGe and SiGe:C-Reference-Cited by-同舟云学术

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Chapter 10 Si-Based alloys: SiGe and SiGe:C

Published:2001 Issue: Volume: Page:345-395
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
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Author:

Meyer D.J.

Publisher

Elsevier

Reference49 articles.

1. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

2. Shockley, W., U.S. Patent 2,569,345; application date, June 26, 1948.

3. Strained Layer Epitaxy—Materials, Processing and Device Applications;Lippert,1995

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1. Estimation of Asymmetrically Distributed Anti-phase Domains Ratio in GaAs/Si(100) Epitaxial Layers Using High Resolution X-Ray Diffraction;Springer Proceedings in Physics;2024

2. Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition;Journal of Crystal Growth;2023-04

3. Vapor – Solid distribution of silicon germanium chemical vapor deposition determined with classical thermodynamics;Journal of Crystal Growth;2021-06

4. Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation;Journal of Synchrotron Radiation;2016-01-01

5. Group IV Materials;Handbook of Silicon Photonics;2013-04-09

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