Metal-insulator transition inAlxGa1−xAs/GaAs heterostructures with large spacer width
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.8818/fulltext
Reference38 articles.
1. Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions
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5. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
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