Impact ionization rate in ZnS
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.1456/fulltext
Reference23 articles.
1. Thresholds of impact ionization in semiconductors
2. Impact-ionization theory consistent with a realistic band structure of silicon
3. Impact ionization rate in GaAs
4. Impact ionization rate near thresholds in Si
5. k dependence of the impact ionization transition rate in bulk InAs, GaAs, and Ge
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1. Ab initioimpact ionization rate in GaAs, GaN, and ZnS;Physical Review B;2005-02-04
2. Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors;Semiconductor Science and Technology;2004-03-05
3. Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS;Physical Review B;2003-05-07
4. Impact ionization and high-field effects in wide-band-gap semiconductors;Physica B: Condensed Matter;2002-03
5. Impact ionization rates of semiconductors in an electric field: The effect of collisional broadening;Journal of Applied Physics;2001-07-15
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