k dependence of the impact ionization transition rate in bulk InAs, GaAs, and Ge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351359
Reference12 articles.
1. Problems related to p-n junctions in silicon
2. Theory of Electron Multiplication in Silicon and Germanium
3. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
4. Band-structure-dependent transport and impact ionization in GaAs
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4. Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs;Journal of Applied Physics;2002-02
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