Impact ionization rate near thresholds in Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355754
Reference16 articles.
1. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
2. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
3. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
4. Electron Scattering by Pair Production in Silicon
5. Impact-ionization theory consistent with a realistic band structure of silicon
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