Lattice strain and static disorder determination inSi/Si1−xGex/Siheterostructures by convergent beam electron diffraction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.13750/fulltext
Reference26 articles.
1. Strain relaxation and dislocations in SiGe/Si structures
2. Analysis of thin‐film solid solutions on single‐crystal silicon by simulation of x‐ray rocking curves: B‐Si and Ge‐Si binary alloys
3. Lattice Parameter and Density in Germanium-Silicon Alloys1
4. Bond-length relaxation in crystallineSi1−xGexalloys: An extended x-ray-absorption fine-structure study
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