Growth mode inSi(100)−(2×1)epitaxy by low-temperature chemical-vapor deposition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12421/fulltext
Reference24 articles.
1. A RHEED study of the surface reconstructions of Si(001) during gas source MBE using disilane
2. Growth anisotropy observed on Si(001) surfaces during Si-GSMBE using disilane
3. In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD
4. Hydrogen coverage during Si growth from SiH4and Si2H6
5. An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)
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