Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300mm UHV/CVD cold-wall reactor

Author:

Adam T.N.,Bedell S.,Reznicek A.,Sadana D.K.,Venkateshan A.,Tsunoda T.,Seino T.,Nakatsuru J.,Shinde S.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Reaction of oxygen with Si(111) and (100): critical conditions for growth of SiO2;Smith;Journal of the Electrochemical Society,1982

2. Interactions of H2O with Si(111) and (100): critical conditions for growth of SiO2;Ghidini;Journal of the Electrochemical Society,1984

3. Canon ANELVA Corporation, 3300 North First Street, San Jose, CA 95134, USA.

4. SpectraFx-100, KLA-Tencor Corporation, 1 Technology Drive, Milpitas, CA 95035, USA.

5. New mechanism for hydrogen desorption from covalent surfaces: the monohydride phase on Si(100);Sinniah;Physical Review Letters,1989

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