A RHEED study of the surface reconstructions of Si(001) during gas source MBE using disilane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference40 articles.
1. Gas source Si-MBE
2. Gas source silicon molecular beam epitaxy using disilane
3. Growth kinetics in silane gas-source molecular beam epitaxy
4. Kinetics and mechanics of Si2H6 surface decomposition on Si
5. Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4
Cited by 91 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiNx and GaN;Surfaces and Interfaces;2023-10
2. Si doping of β -Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy;Applied Physics Letters;2023-02-20
3. Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture;International Journal of Molecular Sciences;2022-12-19
4. Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films;Journal of Materials Science;2022-06-30
5. Ion bombardment effect on properties of MoO thin film under different PEALD plasma exposure time;Vacuum;2022-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3