Theoretical approach to heterojunction valence-band discontinuities: Case of a common anion
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.1105/fulltext
Reference26 articles.
1. A critical review of heterojunction band offsets
2. Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment
3. Electrical characterization of GaAs/AlGaAs semiconductor‐insulator‐semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band‐gap discontinuity
4. Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets
5. Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
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