Electronic structure of the GaSe/Si(111) and InSe/Si(111) heterojunctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.205308/fulltext
Reference39 articles.
1. Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxy
2. Ultrasharp interfaces grown with Van der Waals epitaxy
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5. Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface*
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