Valence-band offsets at strained Si/Ge interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.5572/fulltext
Reference22 articles.
1. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography
2. Silicon-germanium alloys and heterostructures: Optical and electronic properties
3. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
4. Structural and electronic properties of epitaxial thin-layerSinGensuperlattices
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