Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.4774/fulltext
Reference20 articles.
1. Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors
2. Quantum size effect in monolayer-doped heterostructures
3. Electronic properties of a pulse‐doped GaAs structure grown by organometallic vapor phase epitaxy
4. Electronic transport in periodically δ‐doped GaAs layers
5. Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer
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