Quantum magnetotransport inn-InGaAs/GaAs structures with electron density changes caused by infrared radiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4916214
Reference37 articles.
1. Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
2. Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells
3. The persistent photoconductivity effect in modulation Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs quantum well structure
4. Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In[sub 0.2]Ga[sub 0.8]As/Al[sub 0.2]Ga[sub 0.8]As quantum well grown by metalorganic vapor phase epitaxy
5. Persistent-photoconductivity effect in δ-dopedAl0.48In0.52As/Ga0.47In0.53As heterostructures
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1. Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures;Low Temperature Physics;2021-01
2. Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2019-09
3. Insulator-quantum Hall transition in n-InGaAs/GaAs heterostructures;Low Temperature Physics;2017-04
4. The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination;Semiconductors;2017-02
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