Atomic structures of boron-induced protrusion features on Si(100) surfaces
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.035322/fulltext
Reference26 articles.
1. Athermal annealing of low-energy boron implants in silicon
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3. Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure
4. Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study
5. Ultrahigh B doping(<~1022cm−3)during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport
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