Bipolar device fabrication using a scanning tunnelling microscope-Reference-Cited by-同舟云学术

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Bipolar device fabrication using a scanning tunnelling microscope

Published:2020-07-27 Issue:9 Volume:3 Page:524-530
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Škereň Tomáš,Köster Sigrun A.^ORCID,Douhard Bastien,Fleischmann Claudia^ORCID,Fuhrer Andreas^ORCID

Funder

EC | Horizon 2020 Framework Programme

Swiss National Science Foundation | National Center of Competence in Research Quantum Science and Technology

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-020-0445-5.pdf

Reference28 articles.

1. Frank, D. et al. Device scaling limits of Si MOSFETs and their application dependencies. Proc. IEEE 89, 259–288 (2001).

2. Ho, J. et al. Controlled nanoscale doping of semiconductors via molecular monolayers. Nat. Mater. 7, 62–67 (2008).

3. Colombeau, B. et al. Advanced CMOS devices: challenges and implant solutions. Phys. Stat. Sol. A 211, 101–108 (2014).

4. Duffy, R. et al. Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion. J. Mat. Chem. C 2, 9248–9257 (2014).

5. Muhonen, J. et al. Storing quantum information for 30 seconds in a nanoelectronic device. Nat. Nanotechnol. 9, 986–991 (2014).

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