Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study-Reference-Cited by-同舟云学术

Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study

Published:1999-05-31 Issue:22 Volume:82 Page:4464-4467
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Vailionis A.,Glass G.,Desjardins P.,Cahill David G.,Greene J. E.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.82.4464/fulltext

Reference16 articles.

1. Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

2. Implantation and transient boron diffusion: the role of the silicon self-interstitial

3. Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

4. Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

5. Isochronal Annealing of Silicon‐Phosphorus Solid Solutions

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