Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

Published:1997-12 Issue:1-3 Volume:392 Page:L63-L68
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Glass G.,Kim H.,Sardela M.R.,Lu Q.,Carlsson J.R.A.,Abelson J.R.,Greene J.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference21 articles.

1. B‐doped Si(001) grown by gas‐source molecular‐beam epitaxy from Si2H6and B2H6:B incorporation and electrical properties

2. Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base

3. Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

4. Proceedings of the International Electronic Devices Meeting;Kinoshita,1994

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1. Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS Purposes;ECS Transactions;2019-12-18

2. Boron doped cubic silicon probed by high resolution X-ray diffraction;physica status solidi (c);2015-02-09

3. A Kinetic Model for Boron and Phosphorus Doping in Silicon Epitaxy by CVD;Journal of The Electrochemical Society;2005

4. SiGe nanostructures: new insights into growth processes;Journal of Physics: Condensed Matter;2002-08-22

5. A Chemical Mechanism for Determining the Influence of Boron on Silicon Epitaxial Growth;Japanese Journal of Applied Physics;2001-11-15

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