X-ray photoelectron spectroscopy analysis of boron defects in silicon crystal: A first-principles study-Reference-Cited by-同舟云学术

X-ray photoelectron spectroscopy analysis of boron defects in silicon crystal: A first-principles study

Published:2016-05-06 Issue:17 Volume:119 Page:175704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Yamauchi Jun¹,Yoshimoto Yoshihide²,Suwa Yuji³

Affiliation:

1. Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan

2. Department of Computer Science, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

3. Research and Development Group, Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference33 articles.

1. W. K. Hofker , Philips Res. Rep., Suppl. 8, 1 (1975).

2. High concentration effects of ion implanted boron in silicon

3. High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena

4. Hole generation by icosahedral B12in high‐dose boron as‐implanted silicon

5. Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping byB12Icosahedron as a Double Acceptor

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