Angle-resolved photoemission study of thin molecular-beam-epitaxy-grownα-Sn1−xGexfilms withx∼0.5
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.9703/fulltext
Reference33 articles.
1. Synthesis of metastable, semiconducting Ge‐Sn alloys by pulsed UV laser crystallization
2. The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy
3. Angular resolved photoemission of InSb(001) and heteroepitaxial films of α-Sn(001)
4. Study of the phase transition in heteroepitaxially grown films of αSn by Raman spectroscopy
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