Bulk modulus of group- IV and its compound semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference39 articles.
1. Silicon‐based group IV heterostructures for optoelectronic applications
2. Optical band gap of the ternary semiconductor Si1−x−yGexCy
3. A theoretical study of stability, electronic, and optical properties of GeC and SnC
4. Electronic band structures of Ge1−xSnx semiconductors: A first-principles density functional theory study
5. Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
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1. Lindemann’s Role of Melting, Debye Temperature, Dimensionless Mass and Bond Energies for Si-based Tetrahedral Compound Semiconductors;Silicon;2023-09-02
2. Influence of hydrostatic pressure and concentration of Ge on the topological band order of SnSi1-Ge alloys;Materials Science and Engineering: B;2022-07
3. Pressure-induced formation of bulk Ge-Sn compounds with high concentration of Sn;Solid State Communications;2019-05
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