Pressure-induced formation of bulk Ge-Sn compounds with high concentration of Sn-Reference-Cited by-同舟云学术

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Pressure-induced formation of bulk Ge-Sn compounds with high concentration of Sn

Published:2019-05 Issue: Volume:293 Page:48-52
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Gao Pengyue,Liu Guangtao,Peng Feng,Vaitheeswaran G.,Wang Xiaoli,Wu Zhijian,Lv Jian

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Science Challenge Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference32 articles.

1. Bulk modulus of group- IV and its compound semiconductors;Dutta;J. Alloy. Compd.,2017

2. Versatile buffer layer architectures based on Ge1−xSnx alloys;Roucka;Appl. Phys. Lett.,2005

3. Ge1-xSnxalloys pseudomorphically grown on Ge(001);Pérez Ladrón De Guevara;Appl. Phys. Lett.,2003

4. Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates;Shah;J. Cryst. Growth,1987

5. Kinetics governing phase separation of nanostructured SnxGe1-x alloys;Ragan;Phys. Rev. B,2006

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