Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers-Reference-Cited by-同舟云学术

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Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers

Published:2003-11-07 Issue:19 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Glaser E. R.,Freitas J. A.,Shanabrook B. V.,Koleske D. D.,Lee S. K.,Park S. S.,Han J. Y.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.195201/fulltext

Reference31 articles.

1. Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

2. Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

3. Investigations of undoped and Mg-doped wurtzite GaN with luminescence-detected paramagnetic resonance in the 4mm band

4. Paramagnetic defects in GaN

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2. Self-Assembled Single-Crystalline GaN Having a Bimodal Meso/Macropore Structure To Enhance Photoabsorption and Photocatalytic Reactions;ACS Applied Materials & Interfaces;2019-01-04

3. Hydrogen diffusion in GaN:Mg and GaN:Si;Journal of Alloys and Compounds;2018-05

4. Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates;AIP Advances;2018-04

5. Point defects in group-III nitrides;Defects in Advanced Electronic Materials and Novel Low Dimensional Structures;2018

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