Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration-Reference-Cited by-同舟云学术

Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

Published:1999-12 Issue: Volume:273-274 Page:43-45
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hofmann Detlev M,Burkhardt Wolfgang,Leiter Frank,Walter von Förster ,Alves Helder,Hofstaetter Albrecht,Meyer Bruno K,Romanov Nikolai G,Amano Hiroshi,Akasaki Isamu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

3. C. Schnorr, Dissertation, Gießen, 1996.

4. Dynamics of the Optical-Pumping Cycle ofFCenters in Alkali Halides-Theory and Application to Detection of Electron-Spin and Electron-Nuclear-Double-Spin Resonance in the Relaxed-Excited State

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