Addendum to "Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors with spatially variable dielectric constants"
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.20.4372/fulltext
Reference8 articles.
1. Theory of the screening of impurity ions in semiconductors with spatially-variable dielectric constants
2. Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors with spatially variable dielectric constants
3. Erratum: Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors with spatially variable dielectric constants
4. Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Solution of a nonlinear Poisson’s equation for the potential of impurity ions in semiconductors with a spatially variable dielectric constant by an equivalent variational method;Physical Review B;1992-11-15
2. Reply to "Comment on: Electron mobilities based on an exact numerical analysis of the dielectric-function-dependent linearized Poisson's equation for the potential of impurity ions in semiconductors";Physical Review B;1981-04-15
3. Comment on: "Electron mobilities based on an exact numerical analysis of the dielectric-function-dependent linearized Poisson's equation for the potential of impurity ions in semiconductors";Physical Review B;1981-04-15
4. Large-rform for the potential due to an impurity ion in a medium with spatially variable dielectric constant;Physical Review B;1981-02-15
5. An explanation for the anomalous impurity concentrations in Si as measured by the Hall effect;Journal of Applied Physics;1981-02
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