Reply to "Comment on: Electron mobilities based on an exact numerical analysis of the dielectric-function-dependent linearized Poisson's equation for the potential of impurity ions in semiconductors"-Reference-Cited by-同舟云学术

Reply to "Comment on: Electron mobilities based on an exact numerical analysis of the dielectric-function-dependent linearized Poisson's equation for the potential of impurity ions in semiconductors"

Published:1981-04-15 Issue:8 Volume:23 Page:4266-4268
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Scarfone L. M.,Richardson L. M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.23.4266/fulltext

Reference20 articles.

1. Theory of the screening of impurity ions in semiconductors with spatially-variable dielectric constants

2. A variational treatment of the potential of impurity ions in semiconductors with spatially variable dielectric constants

3. Corrections to the impurity-ion potential characterized by a spatially variable dielectric function; corresponding electron-conductivity mobility in silicon and germanium

4. Numerical solution to the nonlinear Poisson's equation including a spatially variable dielectric constant

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thomas - Fermi-type dielectric screening of statistical atomic models of donor-specific impurities in a semiconductor-like valence electron gas at zero temperature;Journal of Physics: Condensed Matter;1996-07-22

2. Effect of valence dielectric screening on ionized-impurity-scattering-limited mobility in GaAs;Physical Review B;1987-05-15

3. Electron scattering by ionized impurities in semiconductors;Reviews of Modern Physics;1981-10-01