Corrections to the impurity-ion potential characterized by a spatially variable dielectric function; corresponding electron-conductivity mobility in silicon and germanium-Reference-Cited by-同舟云学术

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Corrections to the impurity-ion potential characterized by a spatially variable dielectric function; corresponding electron-conductivity mobility in silicon and germanium

Published:1979-05-15 Issue:10 Volume:19 Page:5139-5143
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Richardson L. M.,Scarfone L. M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.19.5139/fulltext

Reference24 articles.

1. Spatially variable dielectric functions in semiconductors and ionized-impurity-limited mobility

2. Ionized impurity scattering in semiconductors with spatially variable dielectric functions

3. Electron mobility in semiconductors based on a dielectric-function modification of the Dingle potential

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Screening of impurity ions in heavily doped semiconductors;Physical Review B;1982-07-15

2. Reply to "Comment on: Electron mobilities based on an exact numerical analysis of the dielectric-function-dependent linearized Poisson's equation for the potential of impurity ions in semiconductors";Physical Review B;1981-04-15

3. Electron mobilities based on an exact numerical analysis of the dielectric-function-dependent linearized Poisson's equation for the potential of impurity ions in semiconductors;Physical Review B;1980-07-15

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