An explanation for the anomalous impurity concentrations in Si as measured by the Hall effect
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328848
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4. Variation of Electrical Properties with Zn Concentration in GaP
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1. Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition;MRS Proceedings;2003
2. Carbon-containing heteroepitaxial silicon and silicon/germanium thin films on Si(001);Handbook of Thin Films;2002
3. Hole mobilities in pseudomorphic Si1−x−yGexCy alloy layers;Thin Solid Films;1998-12
4. Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001);Journal of Applied Physics;1997-11-15
5. Characterization of ZnSe:N Using Screening Effects;MRS Proceedings;1995
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