Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.5247/fulltext
Reference36 articles.
1. Band‐gap narrowing in ordered Ga0.47In0.53As
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5. Optical and structural properties of III-V nitrides under pressure
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3. Screened-exchange LDA methods for films and superlattices with applications to theSi(100)2×1surface and InAs/InSb superlattices;Physical Review B;2000-07-15
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