Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(111) multi-quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. X-ray diffraction measurement of segregation-induced interface broadening in InxGa1−xAs/GaAs superlattices
2. In segregation at the growth front of the GaAs/In0.30Ga0.70As (100) heterojunction
3. Sb-surface segregation and the control of compositional abruptness at the interface
4. Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures
5. M.R. Pillai, P.M. DeLuca, M. Roberts, S.A. Barnett, in preparation.
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