Large-scaleab initiostudy of the binding and diffusion of a Ge adatom on the Si(100) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.2663/fulltext
Reference28 articles.
1. Direct imaging of interfacial ordering in ultrathin (SimGen)psuperlattices
2. Step-driven lateral segregation and long-range ordering duringSixGe1−xepitaxial growth
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4. Anisotropy in surface migration of Si and Ge on Si(001)
5. Growth of Ge on Si(100) and Si(113) studied by STM
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