GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study-Reference-Cited by-同舟云学术

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GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study

Published:2007-01-30 Issue:3 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Motta Nunzio,Boscherini Federico,Sgarlata Anna,Balzarotti Adalberto,Capellini Giovanni,Ratto Fulvio,Rosei Federico

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.035337/fulltext

Reference64 articles.

1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

2. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

3. Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study

4. Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS

5. Evolution of the intermixing process in Ge/Si(111) self-assembled islands

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface;Thin Solid Films;2020-09

2. Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy;Surface Science;2018-05

3. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction;Applied Surface Science;2016-05

4. Identification of Si and Ge atoms by atomic force microscopy;Physical Review B;2015-10-09

5. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth;Journal of Physics: Condensed Matter;2015-05-28

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