Evolution of the intermixing process in Ge/Si(111) self-assembled islands-Reference-Cited by-同舟云学术

Evolution of the intermixing process in Ge/Si(111) self-assembled islands

Published:2002-01 Issue:2-3 Volume:88 Page:264-268
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Motta N,Rosei F,Sgarlata A,Capellini G,Mobilio S,Boscherini F

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)

2. Ge–Si intermixing in Ge quantum dots on Si

3. N. Motta, Proceedings of the NN2000 school, S. Margherita di Pula, Italy, in: S. Bellucci, M. De Crescenzi (Eds.), SIF Conference Proceedings Series, Bologna, 2001.

4. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

5. Evolution of Ge islands on Si(001) during annealing

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