Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125860
Reference22 articles.
1. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials
2. Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si(100)
3. Self-assembled island formation in heteroepitaxial growth
4. Evolution of Ge islands on Si(001) during annealing
5. Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate
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