Exciton localization inInxGa1−xAs-GaAs coupled quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.1095/fulltext
Reference15 articles.
1. Optical characterization of interface disorder in multi-quantum well structures
2. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
3. Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells
4. Photoluminescence study of interface defects in high‐quality GaAs‐GaAlAs superlattices
5. Measurement of 'material' parameters in multi-quantum-well structures
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3. Modulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice;Journal of Applied Physics;2009-09-15
4. Inhomogeneous broadening arising from interface fluctuations in strained InxGa1−xAs/GaAs and (InuGa1−uAs)v(InP)1−v/InP quantum wells;Applied Surface Science;2004-07
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