Electronic structure and spectral properties of paramagnetic point defects inSi3N4
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.12617/fulltext
Reference55 articles.
1. Electronic structure of silicon nitride
2. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition
3. On the nature of deep centres responsible for the memory effect and luminescence of a-SiNx with x ≦ 4/3
4. Effect of hydrogen on photoluminescence spectra of silicon nitride amorphous films
5. Nature of the dominant deep trap in amorphous silicon nitride
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