Anomalous deep-level transients related to quantum well piezoelectric fields inInyGa1−yN∕GaN-heterostructure light-emitting diodes
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.045312/fulltext
Reference36 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
3. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
4. Determination of the piezoelectric field in InGaN quantum wells
5. Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells
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