Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1396315
Reference19 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
3. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
5. Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures
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3. Improved wavelength stability and heat dissipation of InGaN-based light-emitting diodes using a graphene interlayer on patterned sapphire substrate;Applied Physics Letters;2023-05-15
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