Unit cell of strained GeSi
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.15386/fulltext
Reference18 articles.
1. Determination of the lattice constant of epitaxial layers of III-V compounds
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3. Structural studies of (Ga,In)(As,P) alloys and (InAs)m(GaAs)n strained-layer superlattices by fluorescence-detected EXAFS
4. Conservation of bond lengths in strained Ge-Si layers
5. Lattice parameters and local atomic structure of silicon-rich Si-Ge/Si (100) films
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