Early stages of Schottky-barrier formation for Al deposited on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.10277/fulltext
Reference30 articles.
1. Initial stages of Schottky barrier formation: Temperature effects
2. Correlation betweenEFpinning and development of metallic character in Ag overlayers on GaAs(110)
3. Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces
4. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation
5. Formation of Schottky barrier at the Tm/GaAs(110) interface
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1. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
2. Electronic, structural, and dynamical properties of the GaAs(110):Ge surface;Physical Review B;1996-04-15
3. Characterization of the Si/GaAs(110) interface by soft x-ray surface x-ray absorption fine structure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-01
4. Chemisorption of In and Al on GaAs(110);Journal of Applied Physics;1994-09
5. Chemisorption at metal and semiconductor surfaces;Philosophical Magazine B;1994-05
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