Kinetics of persistent photoconductivity inAl0.3Ga0.7As andZn0.3Cd0.7Se semiconductor alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.13996/fulltext
Reference23 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Deep donor levels (DXcenters) in III‐V semiconductors
4. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
5. Magnetic studies of persistent photoconductivity inn-AlxGa1−xAs
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