Magnetic studies of persistent photoconductivity inn-AlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.63.1311/fulltext
Reference18 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. Evidence against the negative-charge-state model for theDXcenter inn-type GaAs
4. Chadi, Chang, and Walukiewicz reply
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