Energetics and electronic structure of stacking faults in AlN, GaN, and InN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.R15052/fulltext
Reference22 articles.
1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
2. Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+x ions: Growth kinetics and defect structure
3. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
4. Structure of GaN films grown by hydride vapor phase epitaxy
5. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure
Cited by 324 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well;Nanotechnology;2024-07-11
2. Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates;Semiconductor Science and Technology;2024-06-24
3. Understanding Interfaces in AlScN/GaN Heterostructures;Advanced Functional Materials;2024-04-24
4. 2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires;ACS Applied Nano Materials;2024-04-15
5. Thermally stable radiative recombination centers within trench structures of red multi-quantum wells;Journal of Physics D: Applied Physics;2024-03-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3