New method to study band offsets applied to strainedSi/Si1−xGex(100)heterojunction interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.7744/fulltext
Reference18 articles.
1. Probing Semiconductor‐Semiconductor Interfaces
2. Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs
3. Microscopic investigation of the band discontinuities at the silicon-germanium heterojunction interface
4. Heterojunction band discontinuity at the Si–Ge(111) interface
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