Reflection high-energy electron-diffraction and photoemission spectroscopy study of GaAs(001) surface modified by Se adsorption
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.8498/fulltext
Reference28 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Effects of H2S adsorption on surface properties of GaAs {100} grown in situ by MBE
3. Effects of passivating ionic films on the photoluminescence properties of GaAs
4. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
5. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
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