Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.9120/fulltext
Reference22 articles.
1. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
2. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
3. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
4. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
5. Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
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