Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study-Reference-Cited by-同舟云学术

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Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

Published:2006-03-03 Issue:10 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zheng J. X.,Ceder G.,Maxisch T.,Chim W. K.,Choi W. K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.104101/fulltext

Reference40 articles.

1. Crystalline Oxides on Silicon – Alternative Dielectrics for Advanced Transistor Technologies

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

4. High ε gate dielectrics Gd2O3 and Y2O3 for silicon

5. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

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